A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells

Author

Sidhu, R. ; Ning Duan ; Campbell, J.C. ; Holmes, A.L., Jr.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Texas, Austin, TX, USA

Volume

17

Issue

12

fYear

2005

Firstpage

2715

Lastpage

2717

Abstract

We report a photodiode on InP substrate with a cutoff wavelength of 2.39 μm and peak room-temperature external quantum efficiency of 43% at 2.23 μm. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were placed in the absorption region for long wavelength absorption. The device showed a peak detectivity of 5.6×10/sup 10/ cm/spl radic/HzW/sup -1/ at 200 K.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; photodiodes; quantum well devices; semiconductor device measurement; semiconductor quantum wells; 2.23 mum; 2.39 mum; 200 K; 43 percent; GaInAs-GaAsSb; InP; InP substrate; external quantum efficiency; lattice-matched GaInAs-GaAsSb type-II quantum wells; peak detectivity; photodiode; Dark current; Electromagnetic wave absorption; Indium phosphide; Infrared detectors; Infrared imaging; Molecular beam epitaxial growth; Optical imaging; Photodetectors; Photodiodes; Temperature; Dark current; detectivity; infrared detectors; mid-wavelength infrared (MWIR); photodetectors; photodiodes; quantum wells (QWs); type-II quantum wells (QWs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.859163

Filename

1542200