Title :
A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface
Author :
Jupina, M.A. ; Lenahan, P.M.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A novel electron spin resonance technique, spin-dependent recombination (SDR), permits extremely rapid, high-signal-to-noise-ratio electron spin resonance (ESR) measurements of electrically active radiation damage centers in (relatively) hard MOS transistors in integrated circuits. SDR was used to observe the radiation-induced buildup of Pbo and E´ centers at relatively low concentration in individual MOSFETs in integrated circuits with (100) silicon surface orientation. Earlier ESR studies of extremely large (~1 cm2) capacitor structures have identified Pb and E´ centers as the dominant radiation-induced defects in MOS devices. The present results extend and confirm these earlier results and at least qualitatively answer objections to the earlier work related to the relevance of large capacitor studies to transistors in an integrated circuit
Keywords :
elemental semiconductors; gamma-ray effects; insulated gate field effect transistors; paramagnetic resonance of defects; semiconductor-insulator boundaries; silicon; silicon compounds; (100) surface orientation; E´ centers; ESR; MOS transistors; MOSFET; Pbo centers; SDR; Si; Si-SiO2 interface; electrically active radiation damage; electron spin resonance technique; gamma-rays; integrated circuits; radiation induced defects; semiconductor; spin-dependent recombination; Integrated circuit measurements; Interface states; MOS capacitors; MOS devices; MOSFETs; Paramagnetic resonance; Radiative recombination; Silicon; Spontaneous emission; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
