Quantum dot superluminescent diodes emitting at 1.3 μm

Author

Rossetti, M. ; Markus, A. ; Fiore, A. ; Occhi, L. ; Velez, C.

Author_Institution

Ecole Polytechnique Fed. de Lausanne EPFL, Inst. of Quantum Electron. & Photonics, Lausanne, Switzerland

Volume

17

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

540

Lastpage

542

Abstract

We report ridge-waveguide superluminescent diodes based on five stacks of self-assembled InAs-GaAs quantum dots. Devices with output powers up to 10 mW emitting around 1.3 μm are demonstrated. Spectral analysis shows a broad emission peak (26-nm full-width at half-maximum) from the dot ground state at low injection, and an additional peak from the excited state at higher bias. Temperature characteristics in the range 10/spl deg/C-80/spl deg/C are also reported. The experimental curves are in good agreement with simulations performed using a traveling-wave rate equation model.

Keywords

III-V semiconductors; excited states; gallium arsenide; ground states; indium compounds; infrared sources; ridge waveguides; self-assembly; semiconductor quantum dots; spectral analysis; superluminescent diodes; 1.3 mum; 10 mW; 10 to 80 degC; InAs-GaAs; InAs-GaAs quantum dots; broad emission; dot ground state; excited state; quantum dot diodes; ridge-waveguide diodes; self-assembled quantum dots; spectral analysis; superluminescent diodes; traveling-wave rate equation model; Biomedical optical imaging; Equations; Optical fiber sensors; Optical fiber testing; Photonics; Power generation; Quantum dots; Stationary state; Superluminescent diodes; US Department of Transportation; Quantum dot (QD); superluminescent diode (SLD); traveling-wave rate equation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.840997

Filename

1396007