Study of a non-thermal/thermal formation of NiO on Ni5W-tapes

We enhanced the Surface Oxidation Epitaxy (SOE) for Ni-tapes containing 0.5% W. For that we applied a chemical oxidation of the tape (in HNO₃ or HNO₃/acetic acid) previous to annealing (Chemical Enhanced Surface Oxidation Epitaxy/CE-SOE). During annealing in air an oriented [200] NiO growth took place. In the case of Ni5W this would not be possible with common SOE. We carried out the annealing experiments at low temperatures (typical deposition temperatures for buffer layers; e.g., 650 °C) and at high temperatures (typical SOE temperatures; 1250 °C). In both cases an oriented [200] NiO layer could be achieved. The obtained X-Ray Diffraction, Light-Microscope, SEM, AFM and SIMS data are reported.