Title :
High-Power and High-Speed Zn-Diffusion Single Fundamental-Mode Vertical-Cavity Surface-Emitting Lasers at 850-nm Wavelength
Author :
Shi, J.-W. ; Chen, C.-C. ; Wu, Y.-S. ; Guol, S.-H. ; Kuo, Chihping ; Yang, YingJay
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Taoyuan
fDate :
7/1/2008 12:00:00 AM
Abstract :
We demonstrate a high-performance Zn-diffusion single-mode 850-nm vertical-cavity surface-emitting laser, which has a low threshold current (0.5 mA), high differential efficiency (80%), high modulation current efficiency (8.2 GHz/mA), and can sustain the single fundamental-mode output with a maximum output power of 7.3 mW under the full range of bias currents. With this device we can achieve 10 Gb/s eye-opening at a low bias current (1.8 mA) and a peak-to-peak driving-voltage of 0.5 V, which corresponds to a very high data-rate/power-dissipation ratio of 6.5 Gps/mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; quantum well lasers; surface emitting lasers; zinc; GaAs-AlGaAs:Zn; Zn-diffusion single fundamental-mode VCSEL; bit rate 10 Gbit/s; current 0.5 mA; current 1.8 mA; peak-to-peak driving-voltage; power 7.3 mW; power dissipation; semiconductor laser; vertical cavity surface emitting lasers; voltage 0.5 V; wavelength 850 nm; High speed optical techniques; Optical arrays; Optical crosstalk; Optical surface waves; Power generation; Quantum well devices; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers; Semiconductor laser; vertical-cavity surface- emitting laser (VCSEL);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.924645
