DocumentCode :
124097
Title :
Body bias control for a coarse grained reconfigurable accelerator implemented with Silicon on Thin BOX technology
Author :
Honlian Su ; Fujita, Yu. ; Amano, Hideharu
Author_Institution :
Dept. of ICS, Keio Univ., Yokohama, Japan
fYear :
2014
fDate :
2-4 Sept. 2014
Firstpage :
1
Lastpage :
6
Abstract :
For low power yet high performance processing in battery driven devices, a coarse grained reconfigurable accelerator called Cool Mega Array (CMA)-SOTB is implemented by using Silicon on Thin BOX (SOTB), a new process technology developed by the Low-power Electronics Association & Project (LEAP). A real chip using a 65nm experimental process achieved a sustained performance of 192MOPS with a power supply of 0.4V and power consumption of 1.7mW. A clock frequency of 89MHz was achieved with a power supply of just 0.4V when a forward bias voltage was given. When using a reverse bias, the leakage current could be suppressed to less than 20μW in the stand-by mode. The key concept of CMA-SOTB is maintaining a balance between performance and leakage current by independently controlling the bias voltages of the PE array and the microcontroller. Evaluations of the operational frequency and power consumption of filter application programs shed light on how to find the combination of bias voltages that achieves the best energy efficiency for a required performance. The range of advantageous power supply voltage for a required performance considering the body bias was also found.
Keywords :
CMOS logic circuits; elemental semiconductors; field programmable gate arrays; leakage currents; low-power electronics; microcontrollers; silicon; silicon-on-insulator; CMA-SOTB; PE array; Si; battery driven devices; body bias control; clock frequency; coarse grained reconfigurable accelerator; cool mega array; energy efficiency; filter application programs; forward bias voltage; frequency 89 MHz; high performance processing; leakage current; microcontroller; power 1.7 mW; power consumption; power supply voltage; reverse bias; silicon on thin box technology; size 65 nm; voltage 0.4 V; Arrays; Clocks; Delays; Leakage currents; Microcontrollers; Registers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Field Programmable Logic and Applications (FPL), 2014 24th International Conference on
Conference_Location :
Munich
Type :
conf
DOI :
10.1109/FPL.2014.6927486
Filename :
6927486
Link To Document :
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