Title :
Unexpected electronic properties of strained La1.85Sr0.15CuO4 epitaxial films
Author :
Ariosa, D. ; Abrecht, M. ; Cloëtta, D. ; Pavuna, D. ; Onellion, M. ; Margaritondo, G.
Author_Institution :
Ecole Polytechnique Fodorale de Lausanne, Fac. of Basic Sci., Lausanne, Switzerland
fDate :
6/1/2003 12:00:00 AM
Abstract :
Surprising results on electronic properties of strained thin La1.85Sr0.15CuO4 epitaxial films are reported. We report on the very first angle resolved photoemission (ARPES) measurements of the dispersion on in-situ grown, in-plane compressed T-phase LSCO films (showing TC enhancement). The data show clear band crossing, implying that in-plane compressive strain at constant doping results in the suppression of the saddle point, changing the topology of the Fermi surface from hole-like to electron-like.
Keywords :
Fermi surface; high-temperature superconductors; lanthanum compounds; photoelectron spectra; strontium compounds; superconducting epitaxial layers; superconducting transition temperature; Fermi surface; LSCO epitaxial film; La1.85Sr0.15CuO4; T-phase; angle resolved photoemission; band crossing; compressive strain; critical temperature; electronic structure; high Tc superconductor; Capacitive sensors; Dispersion; Doping; Photoelectricity; Pulsed laser deposition; Strontium; Substrates; Superconducting films; Superconductivity; Uniaxial strain;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.811971