DocumentCode
1241318
Title
Characterization of Si-CeO2-YBCO tri-layers grown by magnetron sputtering
Author
Chiodoni, A. ; Andreone, D. ; Botta, D. ; Camerlingo, C. ; Fabbri, F. ; Gerbaldo, R. ; Ghigo, G. ; Gozzelino, L. ; Laviano, F. ; Minetti, B. ; Pirri, C.F. ; Tallarida, G. ; Tresso, E. ; Mezzetti, E.
Author_Institution
Dipt. di Fisica, Politecnico di Torino, Italy
Volume
13
Issue
2
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
2860
Lastpage
2863
Abstract
Material aspects of heterostructural Si/CeO2, fabricated by magnetron sputtering as buffered substrates for sputtered YBa2Cu3O7-x (YBCO) films, are studied by means of X-ray diffraction, AFM, Raman and SIMS-ToF analysis. Different Si/CeO2 layouts are chosen and tri-layers Si/CeO2/YBCO, grown on the respective bi-layer substrates, are preliminary analyzed. Outstanding material issues suggest that in the framework of sputtering technology, epitaxy is out of reach for Si/CeO2/YBCO multi-layers. However, the results point toward the scalability/integrability of the technology with silicon processing when the main target consists of networking for integrated electronics.
Keywords
Raman spectra; X-ray diffraction; atomic force microscopy; barium compounds; cerium compounds; high-temperature superconductors; secondary ion mass spectra; silicon; sputtered coatings; superconducting junction devices; superconducting thin films; time of flight spectra; yttrium compounds; AFM; Raman analysis; SIMS-ToF analysis; Si; Si-CeO2-YBCO tri-layers; Si-CeO2-YBa2Cu3O7; X-ray diffraction; YBCO film; buffered substrates; magnetron sputtering; Epitaxial growth; Magnetic analysis; Magnetic materials; Scalability; Semiconductor films; Silicon; Sputtering; Substrates; X-ray diffraction; Yttrium barium copper oxide;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2003.812042
Filename
1212218
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