Recess dependent breakdown behavior of GaAs-HFETs

Author

Geiger, D. ; Dickmann, J. ; Wölk, C. ; Kohn, E.

Author_Institution

Dept. of Electron Devices and Circuits, Ulm Univ., Germany

Volume

16

Issue

1

fYear

1995

Firstpage

30

Lastpage

32

Abstract

GaAs based HEMT devices were fabricated with a constant recess towards the source, whereas the recess width towards the drain was varied. While the off-state breakdown voltage has been improved by the use of a wide recess towards the drain, no dependence of the on-state breakdown on the recess configuration was observed. The constant breakdown voltage in the on-state is analysed by the feedback parameters obtained from an extraction of the small signal equivalent circuit. Although the extrinsic gate drain capacitance could be reduced by the use of a wider recess configuration, it is assumed that the intrinsic drift region is independent of the recess configuration.<>

Keywords

III-V semiconductors; electric breakdown; equivalent circuits; gallium arsenide; high electron mobility transistors; semiconductor device models; GaAs; GaAs HFETs; HEMT devices; constant breakdown voltage; extrinsic gate drain capacitance; feedback parameters; offstate breakdown voltage; on-state breakdown; recess configuration; recess dependent breakdown behavior; recess width; small signal equivalent circuit; Breakdown voltage; Electric breakdown; Equivalent circuits; Frequency; Gallium arsenide; HEMTs; MODFETs; Parasitic capacitance; Shape; Signal analysis;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363209

Filename

363209