A high-gain, modulation-doped photodetector using low-temperature MBE-grown GaAs

Author

Subramanian, S. ; Schulte, D. ; Ungier, L. ; Zhao, P. ; Plant, T.K. ; Arthur, J.R.

Author_Institution

Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA

Volume

16

Issue

1

fYear

1995

Firstpage

20

Lastpage

22

Abstract

We report the fabrication and performance of a novel, high gain photodetector. Basically, the device is a modulation-doped field effect transistor (MODFET) structure with its channel region made of low-temperature MBE-grown GaAs. It exhibits an excellent responsivity of 65 A/W at /spl sim/0.87 μm and 6.5 A/W at /spl perp/1.0 μm. In the sub-bandgap range (0.9-1.3 μm) the responsivity of this device is the highest ever reported, to our knowledge, for any GaAs-based device. Thus, the device appears to be ideally suited for applications requiring a high photodetection sensitivity, especially in the 1.3 μm wavelength region. Charge separation by the built-in field normal to the heterojunction plane is attributed to be responsible for the gain in the device.

Keywords

gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; photodetectors; 0.87 to 1.3 micron; GaAs; MODFET structure; built-in field; channel region; charge separation; fabrication; heterojunction plane; high photodetection sensitivity; high-gain; low-temperature MBE-grown GaAs; modulation-doped field effect transistor; modulation-doped photodetector; Annealing; Electrons; Epitaxial layers; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Photodetectors; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.363212

Filename

363212