Title :
SOI/bulk hybrid technology on SIMOX wafers for high performance circuits with good ESD immunity
Author :
Chan, Mansun ; King, Joseph C. ; Ko, Ping K. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A new SOI/bulk hybrid technology with devices on both the thin film and the bottom substrate of SIMOX wafers has been studied. By fabricating ESD protection circuits on the substrate of SIMOX wafers, ESD reliability of high performance CMOS SOI circuits can be significantly improved. Despite the higher surface defect density and micro-roughness on the bottom substrate of SIMOX wafers compared to ordinary bulk wafers, similar electron mobility, intrinsic thermal oxide properties and hot-carrier degradation are observed among MOSFET´s fabricated on the different substrates. Thus, the hybrid technology is capable of combining the advantages both of SOI and bulk technology in fabricating high performance circuits.<>
Keywords :
CMOS integrated circuits; MOSFET; SIMOX; carrier mobility; electrostatic discharge; hot carriers; integrated circuit reliability; integrated circuit technology; protection; CMOS SOI circuits; ESD immunity; ESD protection circuits; ESD reliability; MOSFET; SIMOX wafers; SOI/bulk hybrid technology; Si; electron mobility; high performance circuits; hot-carrier degradation; intrinsic thermal oxide properties; substrates; CMOS process; CMOS technology; Electrostatic discharge; Fabrication; Immune system; MOSFET circuits; Semiconductor films; Substrates; Thin film circuits; Thin film devices;
Journal_Title :
Electron Device Letters, IEEE
