Title :
Low frequency gate current noise in high electron mobility transistors: experimental analysis
Author :
Bertuccio, G. ; De Geronimo, G. ; Longoni, A. ; Pullia, A.
Author_Institution :
Dipartimento di Elettronica e Inf., Politecnico di Milano, Italy
fDate :
3/1/1995 12:00:00 AM
Abstract :
An experimental investigation on the gate current noise in a pseudomorphic HEMT has been carried out. The measurements have been performed from 10 Hz to 100 kHz, at different bias conditions. It is shown that the noise spectral power density strongly depends on the biasing point and can be explained in terms of carrier trapping phenomena by means of packets of Lorentzian components.<>
Keywords :
electron traps; high electron mobility transistors; hole traps; semiconductor device noise; 10 Hz to 100 kHz; LF gate current noise; Lorentzian components; bias conditions; biasing point; carrier trapping phenomena; high electron mobility transistors; low frequency noise; noise spectral power density; pseudomorphic HEMT; Frequency; HEMTs; Impedance; Low-frequency noise; Low-noise amplifiers; MODFETs; Noise measurement; Noise shaping; PHEMTs; Voltage;
Journal_Title :
Electron Device Letters, IEEE
