Title :
2-D dopant profiling in VLSI devices using dopant-selective etching: an atomic force microscopy study
Author :
Barrett, M. ; Dennis, M. ; Tiffin, D. ; Li, Y. ; Shih, C.K.
Author_Institution :
Dept. of Phys., Texas Univ., Austin, TX, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method.<>
Keywords :
VLSI; atomic force microscopy; doping profiles; etching; integrated circuit measurement; semiconductor doping; 2D dopant profiling; AFM study; VLSI devices; atomic force microscopy; dopant profile mapping; dopant-selective etching; high spatial resolution; reliability; reproducibility; Atomic force microscopy; Doping; Dynamic range; Etching; Integrated circuit modeling; Reproducibility of results; Scanning probe microscopy; Silicon; Spatial resolution; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
