Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors

Author

Curutchet, Arnaud ; Théron, Didier ; Werquin, Matthieu ; Ducatteau, Damien ; Happy, Henri ; Dambrine, Gilles ; Bethoux, J.M. ; Derycke, Vincent ; Gaquière, Christophe

Author_Institution

Integration from Mater. to Syst. (IMS) Lab., Bordeaux Univ., Talence

Volume

56

Issue

7

fYear

2008

fDate

7/1/2008 12:00:00 AM

Firstpage

1505

Lastpage

1510

Abstract

We report for the first time to our knowledge large-signal measurements performed at 600 MHz and in time domain on carbon nanotube field-effect transistors (CNFETs) using a large-signal network analyzer. To overcome the very high mismatch between the high CNFET impedance and the basic 50-Omega configuration of the setup, the output impedance was matched with the help of an experimental active load-pull configuration. Hence, we were able to observe under large-signal conditions the nonlinear behavior of CNFETs. Static measurements and continuous-wave S _ij -parameter measurements were made for many different biases. They were used in order to determine a nonlinear electrical model that has been validated thanks to the nonlinear measurements. The developed model opens the way for electrical CNFET circuit simulation and nonlinear applications of these devices.

Keywords

UHF field effect transistors; carbon nanotubes; field effect transistors; nanotube devices; carbon nanotube field-effect transistors; frequency 600 MHz; large-signal network analyzer; nonlinear characterization; nonlinear electrical model; resistance 50 ohm; Carbon nanotube field-effect transistor (CNFET); large-signal network analyzer (LSNA); neuronal modeler; nonlinear model;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2008.925209

Filename

4538264