Field orientation dependence of magnetoresistance in spin-dependent tunnel junctions

Author

Chiang, Wen-C. ; Chang, Y.M. ; Ho, C.H. ; Yao, Y.D. ; Lin, Minn-Tsong

Author_Institution

Dept. of Phys., Chinese Culture Univ., Taipei, Taiwan

Volume

41

Issue

2

fYear

2005

Firstpage

896

Lastpage

898

Abstract

The dependence of magnetotransport on field orientation is an important issue in spintronics-related devices where the applied field is not necessarily in the ideal field-in-plane (FIP) geometry. In this study, we perform tunneling magnetoresistance (TMR) measurements on Co-Al₂O₃-CoFe-NiFe spin-dependent tunnel (SDT) junctions prepared at different conditions with varying field orientation ranging from FIP to field-perpendicular-to-plane (FPP). The TMR ratio decreases drastically, whereas the switching field of Co increases when the field direction is set close to FPP. Furthermore, in a situation near FPP, a peculiar TMR looping behavior is observed for one set of samples. Interface effect is thought to be related.

Keywords

aluminium compounds; cobalt compounds; galvanomagnetic effects; iron alloys; magnetic switching; nickel alloys; tunnelling magnetoresistance; Co-Al₂O₃-CoFe-NiFe; Co-Al₂O₃-CoFe-NiFe spin-dependent tunnel junctions; TMR looping behavior; TMR ratio; field orientation dependence; field-in-plane geometry; field-perpendicular-to-plane; interface effect; magnetotransport; spintronics-related devices; switching field; tunneling magnetoresistance measurements; Atomic layer deposition; Electrons; Geometry; Magnetic devices; Magnetic field measurement; Magnetic separation; Performance evaluation; Physics; Polarization; Tunneling magnetoresistance; Field-in-plane (FIP); field-perpendicular-to-plane (FPP); spin-dependent tunnel (SDT) junction; tunneling magnetoresistance (TMR);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.842082

Filename

1396250