DocumentCode :
1241798
Title :
1.8-V nanospeed R/W module for 64-kB cross-point cell magnetic random access memory
Author :
Li, Simon C. ; Lee, Jia-Mou ; Su, J.P. ; Wu, Te-Ho
Author_Institution :
Taiwan SPIN Res. Center, Nat. Yunlin Univ. of Sci. & Technol., Touliu, Taiwan
Volume :
41
Issue :
2
fYear :
2005
Firstpage :
909
Lastpage :
911
Abstract :
Cross-point (CP) magnetic random access memory (MRAM) is a promising nonvolatile memory cell for lower cost high-density data-storage applications because the CP cell comprises one magnetic tunnel junction (MTJ) only without a transistor. It is difficult to read/write (R/W) a selected data without large mount of leakage current through adjacent mesh resistive loop while the bit line and the word line are electrically coupled through the CP MTJs in the array that are completely electrically unisolated. A novel scheme of high-speed R/W circuitry with no steady leakage for cross-point cell MRAM is proposed. A novel cell R/W circuitry with a sense amplifier is developed and incorporated into a 64-kB CP MRAM which using MTJs is designed with 15 kΩ resistance and a 50% magnetoresistance ratio. The proposed scheme with low power consumption is verified by a 0.18-μm Taiwan Semiconductor Manufacturing Company complementary metal-oxide semiconductor SP5M technology.
Keywords :
CMOS memory circuits; leakage currents; low-power electronics; magnetic storage; magnetic tunnelling; random-access storage; 0.18 micron; 1.8 V; 64 kB; CMOS; Taiwan Semiconductor Manufacturing Company; complementary metal-oxide semiconductor SP5M technology; cross-point cell magnetic random access memory; high-speed R/W circuitry; leakage current; low power consumption; magnetic tunnel junction; mesh resistive loop; nonvolatile memory cell; sense amplifier; Costs; Coupling circuits; Electric resistance; Energy consumption; Leakage current; Magnetic circuits; Magnetic tunneling; Magnetoresistance; Nonvolatile memory; Random access memory; Cross-point (CP) magnetic random access memory (MRAM); magnetoresistance ratio; read/write (R/W) circuitry;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2004.842090
Filename :
1396254
Link To Document :
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