Title :
Influence of Pb and La contents on the lattice configuration of La-substituted Pb(Zr,Ti)O3 films fabricated by CSD method
Author :
Shima, Hiromi ; Nishida, Ken ; Funakubo, Hiroshi ; Iijima, Takashi ; Katoda, Takashi ; Naganuma, Hiroshi ; Okamura, Soichiro
Author_Institution :
Dept. of Appl. Phys., Tokyo Univ. of Sci., Tokyo
fDate :
4/1/2009 12:00:00 AM
Abstract :
The influence of Pb and La contents on the lattice configuration in La-substituted Pb(Zr0.65,Ti0.35)O3 (La-PZT) films was systematically investigated. La-PZT films with various La and Pb contents were fabricated on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). In the La-PZT films with a Pb content ratio of 125% relative to a stoichiometric value, La ions were substituted for not only A-site ions but also B-site ions at La contents greater than 3 mol%. La substitution for B-site seems to cause larger reduction of the unit cell size. In addition, we found that in the La-PZT films with a La content of 3 mol%, the Pb content of 116 mol% (120% relative to a stoichiometric value) was optimum from the viewpoint of site occupancy. This indicates that excess Pb prevented the A-site substitution of La ions.
Keywords :
ferroelectric thin films; lanthanum compounds; lead compounds; liquid phase deposition; stoichiometry; La-substituted films; PLZT; Pt-Ti-SiO2-Si; chemical solution deposition; ferroelectric films; lattice configuration; stoichiometry; unit cell size; Ceramics; Defense industry; Ferroelectric films; Ferroelectric materials; Hysteresis; Lattices; Pulse measurements; Radiofrequency identification; Raman scattering; Size measurement; Ceramics; Crystallization; Lanthanum; Lead; Materials Testing; Membranes, Artificial; Molecular Conformation;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
DOI :
10.1109/TUFFC.2009.1091
