Title :
High-power and wide-temperature-range operations of InGaAsP-InP strained MQW lasers with reverse-mesa ridge-waveguide structure
Author :
Aoki, M. ; Tsuchiya, T. ; Nakahara, K. ; Komori, M. ; Uomi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
A new structure for an InP-based ridge-waveguide laser is demonstrated. It has a reverse-trapezoid-ridge shape that offers reduced threshold current and smaller series resistance suitable for wide-temperature-range and high power operations. A 1.3 μm strained InGaAsP-InP MQW laser with the new ridge structure demonstrated over 200 mW output under a 440 mA injected current. Low threshold (<25 mA) and high efficiency (>0.3 W/A) operation was also achieved under 90/spl deg/C for 1.53 μm strained MQW lasers.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; optical waveguides; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 /spl mu/m strained InGaAsP-InP MQW laser; 1.3 mum; 1.53 /spl mu/m strained MQW lasers; 1.53 mum; 200 mW; 25 mA; 440 mA; 90 C; InGaAsP-InP; InGaAsP-InP strained MQW lasers; InP-based ridge-waveguide laser; high efficiency; high power operations; high-power; injected current; low threshold; reduced threshold current; reverse-mesa ridge-waveguide structure; reverse-trapezoid-ridge shape; ridge structure; series resistance; wide-temperature-range; wide-temperature-range operations; Diode lasers; Epitaxial growth; Fiber lasers; Indium gallium arsenide; Laser theory; Power lasers; Quantum well devices; Shape; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
