• DocumentCode
    1241977
  • Title

    Low-temperature operation of vertical cavity surface-emitting lasers

  • Author

    Goobar, Edgard ; Mahon, Cathal ; Peters, Frank H. ; Peters, Matt G. ; Coldren, Larry A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    7
  • Issue
    1
  • fYear
    1995
  • Firstpage
    7
  • Lastpage
    9
  • Abstract
    Vertical cavity surface-emitting lasers originally designed for room temperature operation are operated at 77 K. At this temperature, the gain peak and the cavity mode do not overlap. However, due to joule heating, at high biasing levels they come back into alignment and high single-mode output powers and large modulation bandwidths are observed.<>
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser modes; semiconductor lasers; surface emitting lasers; 77 K; AlGaAs active layer; AlGaAs-GaAs; alignment; cavity mode; gain peak; high biasing levels; high single-mode output powers; joule heating; large modulation bandwidths; low-temperature operation; room temperature operation; vertical cavity surface-emitting lasers; Bandwidth; Gallium arsenide; Laser modes; Optical modulation; Optical surface waves; Power generation; Resonance; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.363393
  • Filename
    363393