Ultralow threshold and uniform operation (1.3/spl plusmn/0.09 mA) in 1.3-μm strained-MOW 10-element laser arrays for parallel high-density optical interconnects

Author

Uomi, K. ; Oka, A. ; Tsuchiya, T. ; Komori, M. ; Kawano, T. ; Oishi, A.

Author_Institution

Central Res. Lab., Hitachi Ltd., Kokubunji, Japan

Volume

7

Issue

1

fYear

1995

Firstpage

1

Lastpage

3

Abstract

An ultralow-threshold 1.3-μm InGaAsP-InP 10-element monolithic laser array is achieved through careful optimization of a strained-MQW active layer. This array has a record-low threshold current, highly uniform threshold current characteristics (1.3/spl plusmn/0.09 mA and slope efficiency of 0.37/spl plusmn/0.01 W/A), and long-term reliability. This array is suitable as light sources for a parallel high-density optical interconnection system.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; integrated optoelectronics; optical interconnections; parallel architectures; quantum well lasers; semiconductor device reliability; semiconductor laser arrays; 1.3 mA; 1.3 mum; 1.3-/spl mu/m strained-MOW 10-element laser arrays; InGaAsP-InP; highly uniform threshold current; light sources; long-term reliability; monolithic laser array; optimization; parallel high-density optical interconnection system; parallel high-density optical interconnects; record-low threshold current; slope efficiency; strained-MQW active layer; ultralow threshold; uniform operation; Capacitive sensors; Laser modes; Laser theory; MOCVD; Optical arrays; Optical interconnections; Quantum well devices; Semiconductor laser arrays; Substrates; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.363395

Filename

363395