Performances of phase-change recording disks based on GaSbTe media

Author

Lee, Chain-Ming ; Yen, Wen-Shin ; Chen, Jung-Po ; Chin, Tsung-Shune

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing-Hua Univ., Hsinchu, Taiwan

Volume

41

Issue

2

fYear

2005

Firstpage

1022

Lastpage

1024

Abstract

Phase-change optical disks with novel GaSbTe recording media were prepared in the DVD+RW format and evaluated by a dynamic tester at 1X speed. The studied compositions locate along the Sb₇Te₃-GaSb and Sb₂Te₃-GaSb pseudo-binary tielines. The disks were prepared by an RF co-sputtering method. Enhanced recrystallization has been demonstrated in the disks with Sb₇Te₃-rich recording layer. An approximated composition Ga₂Sb₅Te₃ even exhibited a nearly complete erasure (CNR∼45 dB, dcerasability∼-40 dB). Relationship between the dynamic characteristics and crystal structure of the GaSbTe materials has been proposed.

Keywords

antimony alloys; digital versatile discs; gallium alloys; phase change materials; recrystallisation; sputtering; tellurium alloys; DVD+RW format; Ga₂Sb₅Te₃; GaSbTe; GaSbTe materials; GaSbTe media; RF cosputtering method; Sb₇Te₃; enhanced recrystallization; phase-change optical disks; phase-change recording disks; pseudo-binary tielines; Crystalline materials; DVD; Disk recording; High speed optical techniques; Optical materials; Optical recording; Radio frequency; Tellurium; Testing; Writing; Chalcogenide; Ga-Sb-Te; dynamic testing; optical disk; phase change;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.842036

Filename

1396288