Characterization of neutron radiation damage in GaAs

Author

Griffin, P.J. ; Lazo, M.S. ; Luera, T.F. ; Kelly, J.G.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

36

Issue

6

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

1937

Lastpage

1944

Abstract

The NJOY and MARLOWE computer codes are used to characterize neutron damage to GaAs. The fidelity of the components that affect the calculated GaAs damage is examined. The initial defect production is found to be a linear function of the damage energy. Recombination of Frenkel pairs and the distribution of vacancies introduce a nonlinearity in the residual defect population with respect to the damage energy. Consideration of the defect recombinations only provides a slight improvement in the agreement between measured and calculated damage in GaAs but does indicate the areas where more work is needed

Keywords

Frenkel defects; III-V semiconductors; gallium arsenide; neutron effects; physics computing; vacancies (crystal); Frenkel pairs recombination; MARLOWE computer codes; NJOY computer code; damage energy; neutron radiation damage; residual defect population; semiconductor; vacancies distribution; Area measurement; Energy capture; Gallium arsenide; III-V semiconductor materials; Kinematics; Laboratories; Neutrons; Production; Scattering; Uncertainty;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.45390

Filename

45390