Scanning heterodyne interferometer setup for the time-resolved thermal and free-carrier mapping in semiconductor devices

Author

Litzenberger, Martin ; Fürböck, Christoph ; Bychikhin, Sergey ; Pogany, Dionyz ; Gornik, Erich

Author_Institution

Inst. for Solid State Electron., Vienna Univ. of Technol., Austria

Volume

54

Issue

6

fYear

2005

Firstpage

2438

Lastpage

2445

Abstract

An automated scanning interferometer setup for time resolved measurement of thermal and free carrier distribution in semiconductor devices during short stress pulses is presented. The semiconductor device is probed via the thermal and free carrier induced changes in the semiconductor refractive index using a heterodyne interferometer. The setup integrates device stressing facilities, data acquisition and laser beam scanning. The time and space resolutions are 3 ns and 1.5 μm, respectively. Different modes of interferometer configurations are discussed with respect to their application. A program for the extraction of the optical phase shift and calculation of the power dissipation density from the optical signal is also presented. The error due to measurement accuracy, as well as that introduced by the data post processing, is estimated.

Keywords

carrier density; light interferometers; refractive index; semiconductor device measurement; semiconductor device testing; 3 micron; 3 ns; automated instrumentation; automated scanning interferometer; data acquisition; data post processing; free carrier distribution; free-carrier mapping; heterodyne interferometer; interferometer configuration; laser beam scanning; optical phase shift; optical signal; phase shift extraction; power density mapping; power dissipation density; semiconductor device testing; semiconductor refractive index; short stress pulses; thermooptic effect; time resolved measurement; time-resolved thermal mapping; Optical interferometry; Optical mixing; Optical refraction; Optical variables control; Phase shifting interferometry; Pulse measurements; Semiconductor device measurement; Semiconductor devices; Stress measurement; Thermal stresses; Automated instrumentation; device simulation calibration; heterodyne interferometer; phase shift extraction; power density mapping; semiconductor device testing; thermal mapping; thermooptic effect;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/TIM.2005.858121

Filename

1542548