Title :
Application of a model for treatment of time dependent effects on irradiation of microelectronic devices
Author :
Brown, Dennis B. ; Jenkins, William C. ; Johnston, Allan H.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A simple model for interpreting and extrapolating time-dependent effects in the irradiation of microelectronic devices is tested by fitting its predictions to published and previously unpublished experimental data. The goal is to evaluate the applicability of such a model to hardness assurance testing in cases where defect growth and annealing processes (time-dependent effects) are significant. Data are presented indicating hole annealing times varying by more than six orders of magnitude. The implications of the large variation in hole annealing times for hardness assurance testing are explored
Keywords :
CMOS integrated circuits; annealing; insulated gate field effect transistors; radiation hardening (electronics); semiconductor device models; semiconductor device testing; CMOS transistors; annealing processes; defect growth; hardness assurance testing; hole annealing times; microelectronic device irradiation; time-dependent effects; Acceleration; Annealing; Electronic equipment testing; Extrapolation; Failure analysis; Ionizing radiation; Laboratories; Microelectronics; Proposals; Time measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
