Analysis of corrugated quantum well structures for laser applications

Author

Eliseev, P.G. ; Nabiev, R.F. ; Onishchenko, A.I.

Author_Institution

P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow, Russia

Volume

142

Issue

1

fYear

1995

fDate

2/1/1995 12:00:00 AM

Firstpage

2

Lastpage

4

Abstract

Ultrathin active layers with quantum well (QW) depth and/or width modulation in one or two lateral directions are considered. It is shown that modulation leads to a modification in the density of state (DOS) distribution and, hence is involved in working optical transitions. Such features of corrugated QW (CQW) can be suitable in laser structures for reducing the threshold carrier concentration, increasing the T₀ parameter and stabilising the operation wavelength compared to ordinary quantum well structures. An advantage of these profiled QWs is the opportunity to use suitable properties of 1D and 0D objects without actually making these microstructures, but only profiling the planar QW

Keywords

carrier density; quantum well lasers; corrugated quantum well structures; density of state distribution; laser applications; laser structures; lateral directions; operation wavelength; planar quantum well; profiling; quantum well depth modulation; quantum well width modulation; threshold carrier concentration; ultrathin active layers; working optical transitions;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19951672

Filename

363572