Title :
8 Gbit/s GaAs-on-InP 1.3 μm wavelength OEIC transmitter
Author :
Calliger, O. ; Clei, A. ; Robein, D. ; Azoulay, R. ; Pierre, B. ; Biblemont, S. ; Kazmierski, C.
Author_Institution :
France Telecom, CNET, Bagneux, France
fDate :
2/1/1995 12:00:00 AM
Abstract :
Using GaAs-on-InP heteroepitaxial technology, a 1.3 μm OEIC transmitter combining a BRS laser with two GaAs metal-semiconductor field-effect-transistors has been fabricated. The device design, fabrication processing and performance are described. 8 Gbit/s NRZ direct modulation is demonstrated. This is the highest bit rate ever reported for GaInAsP laser GaAs-on-InP transistor circuits
Keywords :
III-V semiconductors; MESFET integrated circuits; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical fabrication; optical transmitters; semiconductor lasers; 1.3 mum; 8 Gbit/s; BRS laser; GaAs; GaAs metal-semiconductor field-effect-transistors; GaAs-InP; GaAs-on-InP heteroepitaxial technology; GaInAsP; GaInAsP laser; OEIC transmitter; buried ridge structure laser; device design; fabrication processing; performance;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19951671
