DocumentCode :
1242822
Title :
A compact tunable CMOS transconductor with high linearity
Author :
Kachare, Meghraj ; López-Martín, Antonio J. ; Ramirez-Angulo, Jaime ; Carvajal, Ramon G.
Author_Institution :
Klipsch Sch. of Electr. & Comput. Eng., New Mexico State Univ., Las Cruces, NM, USA
Volume :
52
Issue :
2
fYear :
2005
Firstpage :
82
Lastpage :
84
Abstract :
A novel CMOS linear transconductor is presented. The use of simple and accurate voltage buffers to drive two MOS transistors operating in the triode region leads to a highly linear voltage-to-current conversion. Transconductance gain can be continuously and precisely adjusted using dc level shifters. Measurement results of a balanced transconductor fabricated in a 0.5-μm CMOS technology show a total harmonic distortion of -54 dB at 100 kHz for an 80-μA peak-to-peak output, using a supply voltage of 2 V. It requires 0.07-mm2 of silicon (Si) area and features 0.96 mW of static power consumption.
Keywords :
CMOS analogue integrated circuits; buffer circuits; operational amplifiers; 0.5 micron; 0.96 mW; 100 kHz; 2 V; 80 muA; CMOS technology; MOS transistors; analog CMOS circuits; balanced transconductor; compact tunable CMOS transconductor; dc level shifters; harmonic distortion; linear operational transconductance amplifiers; linear transconductor; transconductance gain; triode region; voltage buffers; voltage-to-current conversion; Area measurement; CMOS technology; Distortion measurement; Linearity; MOSFETs; Power measurement; Total harmonic distortion; Transconductance; Transconductors; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2004.842065
Filename :
1396406
Link To Document :
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