DocumentCode :
1242857
Title :
Monolithic large-signal transimpedance amplifier for use in multi-gigabit, short-range optoelectronic interconnect applications
Author :
Vilches, Antonio ; Loga, Rodney ; Rahal, Mouhamed ; Fobelets, Kristel ; Papavassiliou, Christos ; Hall, Trevor J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, UK
Volume :
52
Issue :
2
fYear :
2005
Firstpage :
102
Lastpage :
106
Abstract :
A novel large-signal transimpedance amplifier front-end, intended for monolithic integration with a Si p-i-n diode and employing HBT-CMOS technology for use in short-range optoelectronic interconnects is proposed. Simulated bandwidth and gain are >4 Gbits/s and 43 dBΩ, respectively, while driving a 100-fF load to TTL voltage levels.
Keywords :
BiCMOS integrated circuits; amplifiers; integrated circuit interconnections; integrated optoelectronics; p-i-n photodiodes; 100 fF; BiCMOS; HBT-CMOS technology; Si; TTL voltage levels; monolithic large-signal transimpedance amplifier; multi-gigabit optoelectronic interconnect applications; p-i-n diode; short range optoelectronic interconnect applications; Bandwidth; CMOS logic circuits; CMOS technology; Feedback; Impedance; Integrated circuit interconnections; Operational amplifiers; Pulse amplifiers; Resistors; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-7747
Type :
jour
DOI :
10.1109/TCSII.2004.840111
Filename :
1396411
Link To Document :
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