Author :
Hurm, V. ; Benz, W. ; Berroth, M. ; Fink, T. ; Fritzsche, D. ; Haupt, M. ; Hofmann, P. ; Jakobus, T. ; Kohler, Klaus ; Ludwig, M. ; Mause, K. ; Raynor, B. ; Rosenzweig, J.
Abstract :
The first 1.3 μm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At differential output of the implemented multistage amplifier the transimpedance is 26.8 kΩ (into 50 Ω). The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical fibre communication; optical fibres; optical receivers; photodiodes; 1.3 micrometre; 26.8 kohm; 430 MHz; 622 Mbit/s; AlGaAs-GaAs; AlGaAs/GaAs HEMTs; InGaAs; InGaAs MSM photodiode; bandwidth; differential output; integrated optoelectronic receiver; multistage amplifier; transimpedance; transmission rates;
