Title :
Comments on "GaAs dual-gate FET for operation up to K-band
Author :
Vickes, Hans-Olof
Author_Institution :
Chalmers Univ. of Technol., Gothenburg, Sweden
fDate :
6/1/1988 12:00:00 AM
Abstract :
For the original article see ibid., vol.MTT-32, no.3, p.256-61 (1984). The commenter has rederived expressions from the work by B. Kim et al. and found errors of algebraically inconsistent expressions even with the appropriate approximations taken into account. Equations 10, 11a, 14, 15, 16 and entries in table 1 are corrected.<>
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; solid-state microwave devices; GaAs; III-V semiconductor; K-band; dual-gate FET; microwave device; Differential equations; Error correction; FETs; Gallium arsenide; Impedance; K-band;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
