• DocumentCode
    1242989
  • Title

    Comments on "GaAs dual-gate FET for operation up to K-band

  • Author

    Vickes, Hans-Olof

  • Author_Institution
    Chalmers Univ. of Technol., Gothenburg, Sweden
  • Volume
    36
  • Issue
    6
  • fYear
    1988
  • fDate
    6/1/1988 12:00:00 AM
  • Firstpage
    1111
  • Abstract
    For the original article see ibid., vol.MTT-32, no.3, p.256-61 (1984). The commenter has rederived expressions from the work by B. Kim et al. and found errors of algebraically inconsistent expressions even with the appropriate approximations taken into account. Equations 10, 11a, 14, 15, 16 and entries in table 1 are corrected.<>
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; solid-state microwave devices; GaAs; III-V semiconductor; K-band; dual-gate FET; microwave device; Differential equations; Error correction; FETs; Gallium arsenide; Impedance; K-band;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.3643
  • Filename
    3643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1242989