• DocumentCode
    1243019
  • Title

    High peak-to-valley current ratio In0.22Ga0.78As/AlAs RTDs on GaAs using relaxed In xGa1-x buffers

  • Author

    Aggarwal, R.J. ; Fonstad, C.G., Jr.

  • Author_Institution
    Res. Lab. of Electron., MIT, Cambridge, MA, USA
  • Volume
    31
  • Issue
    1
  • fYear
    1995
  • fDate
    1/5/1995 12:00:00 AM
  • Firstpage
    75
  • Lastpage
    77
  • Abstract
    The authors have grown In0.22Ga0.78As/AlAs resonant tunnelling diodes (RTDs) on relaxed InxGa1-x As buffers on GaAs substrates, which show the largest peak-to-valley current ratio (PVCR), 13:1, ever reported for GaAs-based RTDs. X-ray diffraction and photoluminescence (PL) studies confirm the composition and relaxation of the buffers. The intrinsic device performance is excellent despite the presence of some dislocations in the active layers. However, it appears that the relaxed buffers do add series resistance to the intrinsic device
  • Keywords
    III-V semiconductors; X-ray diffraction; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; resonant tunnelling diodes; semiconductor epitaxial layers; semiconductor growth; InGaAs-AlAs; RTDs; X-ray diffraction studies; dislocations; peak-to-valley current ratio; photoluminescence studies; relaxed buffers; resonant tunnelling diodes; series resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950002
  • Filename
    364303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1243019