Title :
Electron emission from phosphorus- and boron-doped polycrystalline diamond films
Author :
Okano, K. ; Gleason, K.K.
Author_Institution :
Dept. of Chem. Eng., MIT, Cambridge, MA, USA
fDate :
1/5/1995 12:00:00 AM
Abstract :
The electron emission from CVD-grown phosphorus (P-) and boron (B)-doped polycrystalline diamond films has been studied. The current density against electric field characteristics of the P-doped film showed low-field emission compared to the B-doped film. From the slope ratio of the Fowler-Nordheim (F-N) characteristics of P- and B-doped films, a ratio of 0.66 for the emission barrier height was obtained. The small ratio might be caused by the n-type semiconducting properties of P-doped diamond films
Keywords :
CVD coatings; boron; diamond; electron field emission; elemental semiconductors; phosphorus; semiconductor thin films; vacuum microelectronics; C:B; C:B films; C:P; C:P films; CVD-grown films; Fowler-Nordheim characteristics; current density; electron emission; emission barrier height; low-field emission; n-type semiconducting properties; polycrystalline diamond films; slope ratio; vacuum microelectronics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950027
