DocumentCode
1243049
Title
AlN-GaN quarter-wave reflector stack grown by gas-source MBE on (100) GaAs
Author
Fritz, I.J. ; Drummond, T.J.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
31
Issue
1
fYear
1995
fDate
1/5/1995 12:00:00 AM
Firstpage
68
Lastpage
69
Abstract
A 15 period, wurtzite-structure AlN-GaN reflector stack has been grown on (100) GaAs by gas-source molecular beam epitaxy. A peak reflectance of over 90% has been realised, in agreement with a matrix-method computer simulation. Our results support the feasibility of vertical Fabry-Perot cavity optoelectronics using nitride materials
Keywords
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium compounds; mirrors; optical fabrication; semiconductor epitaxial layers; semiconductor growth; (100) GaAs substrate; AlN-GaN; GaAs; gas-source MBE; matrix-method computer simulation; optical mirror structures; peak reflectance; quarter-wave reflector stack; vertical Fabry-Perot cavity optoelectronics; wurtzite structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950020
Filename
364307
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