Aluminum Nitride Ceramic Substrates-Bonded Vertical Light-Emitting Diodes

Author

Jeong, Tak ; Kim, Kang Ho ; Lee, Seung Jae ; Lee, Sang Hern ; Jeon, Seong Ran ; Lim, Sue Hyun ; Baek, Jong Hyeob ; Lee, June Key

Volume

21

Issue

13

fYear

2009

fDate

7/1/2009 12:00:00 AM

Firstpage

890

Lastpage

892

Abstract

We confirmed the potential of an aluminum nitride (AlN) substrate to be used as a bonding material for the high current operation of vertical light-emitting diodes (VLEDs). For the electrical connection to the top and bottom of the AlN substrate, via-holes were formed by laser drilling and then filled with Ag, which plays a role in improving the thermal dissipation from the VLEDs. The forward voltage of the fabricated AlN-bonded VLEDs was 3.54 V at 350 mA, which is similar to that of the Si-bonded VLEDs. It was also found that the light output power of the AlN-bonded VLEDs increased steadily with increasing injection current up to 1 A, while that of the Si-bonded VLEDs started to decrease at around 850 mA. In addition, the thermal resistance of the AlN-bonded VLEDs was significantly reduced, as compared with that of the Si-bonded VLEDs and conventional LEDs, under the same package conditions.

Keywords

bonding processes; cooling; laser beam machining; light emitting diodes; silver; Ag; AlN; VLED fabrication; aluminum nitride ceramic substrate; bonding material; current 350 mA; electrical connection; laser drilling; light output power; silicon bonded VLED comparison; thermal dissipation; vertical light-emitting diode; voltage 3.54 V; Aluminum nitride (AlN) substrates; GaN; thermal resistance; vertical light-emitting diodes (VLEDs); wafer bonding;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2009.2020061

Filename

4815519