Absolute voltage measurements on III-V integrated circuits by internal electro-optic sampling

Author

Duvillaret, L. ; Lourtioz, J.-M. ; Chusseau, L.

Author_Institution

Campus Sci., Savoie Univ., Le Bourget-du-Lac, France

Volume

31

Issue

1

fYear

1995

fDate

1/5/1995 12:00:00 AM

Firstpage

23

Lastpage

24

Abstract

The authors present a calibration method for internal electro-optic sampling of III-V integrated circuits which allows absolute voltage measurements within accuracy of a few percent. Experimental tests are performed on a 50 Ω coplanar GaAs line at multigigahertz frequencies. A 1.55 μm gain-switched laser diode is used as the optical source. Results of potential mapping agree very well with numerical simulations from a finite element model. A value of 3.7 kV (±15%) is estimated for the GaAs half-wave voltage V_π at the operating frequencies

Keywords

III-V semiconductors; calibration; electro-optical devices; finite element analysis; gallium arsenide; integrated circuit measurement; monolithic integrated circuits; signal sampling; voltage measurement; 1.55 micron; 3.7 kV; 50 ohm; GaAs; III-V integrated circuits; absolute voltage measurements; calibration; coplanar GaAs line; finite element model; gain-switched laser diode; half-wave voltage; internal electro-optic sampling; multigigahertz frequencies; numerical simulations; potential mapping;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950053

Filename

364322