Title :
New mechanism of hot carrier generation in very short channel MOSFETs
Author :
Childs, P.A. ; Leung, C C C
Author_Institution :
Sch. of Electron. & Electr. Eng., Birmingham Univ., UK
fDate :
1/19/1995 12:00:00 AM
Abstract :
Results are presented which suggest that as device dimensions are scaled down, hot carrier reliability problems may re-emerge despite reductions in supply voltage. This conclusion is drawn from theoretical results which show an increasingly important role played by electron-electron interactions as device dimensions are reduced
Keywords :
MOSFET; hot carriers; semiconductor device reliability; device dimensions reduction; device scaling; electron-electron interactions; hot carrier generation; hot carrier reliability; very short channel MOSFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950091
