DocumentCode
1243272
Title
Fabrication technique for Si single-electron transistor operating at room temperature
Author
Takahashi, Y. ; Nagase, Masanori ; Namatsu, H. ; Kurihara, Keiichirou ; Nakajima, Yoshiki ; Horiguchi, Shogo ; Murase, K. ; Tabe, Michiharu
Author_Institution
NTT LSI Labs., Kanagawa
Volume
31
Issue
2
fYear
1995
fDate
1/19/1995 12:00:00 AM
Firstpage
136
Lastpage
137
Abstract
A Si single electron transistor (SET) was fabricated by converting a one-dimensional Si wire on a SIMOX substrate into a small Si island with a tunnelling barrier at each end by means of pattern-dependent oxidation. With this structure, the total capacitance was reduced to ~2aF, which enabled conductance oscillation of the SET at room temperature
Keywords
SIMOX; capacitance; elemental semiconductors; oxidation; semiconductor technology; silicon; single electron transistors; tunnelling; 2 aF; SET; SIMOX substrate; Si; Si island; capacitance reduction; conductance oscillation; fabrication technique; one-dimensional Si wire; pattern-dependent oxidation; room temperature operation; single-electron transistor; tunnelling barrier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950082
Filename
364347
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