Title :
DC and RF characteristics of double recessed and double pulse doped AlInAs/GaInAs/InP HEMTs
Author :
Hur, K.Y. ; McTaggart, R.A. ; Miller, A.B. ; Hoke, W.E. ; Lemonias, P.J. ; Aucoin, L.M.
Author_Institution :
Res. Div., Raytheon Co., Lexington, MA, USA
fDate :
1/19/1995 12:00:00 AM
Abstract :
The effects of gate recess etch profiles on DC and RF characteristics of passivated, double pulse doped AlInAs/GaInAs/InP HEMTs were investigated. On-wafer characterisation has revealed that double recessed devices have higher breakdown voltage, lower output conductance, input capacitance, and feedback capacitance compared to conventional single recessed devices
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; capacitance; doping profiles; electric breakdown; etching; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; AlInAs-GaInAs-InP; DC characteristics; EHF; MM-wave power HEMT; RF characteristics; breakdown voltage; double pulse doped devices; double recessed devices; feedback capacitance; gate recess etch profiles; input capacitance; onwafer characterisation; output conductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950063
