DocumentCode
1243331
Title
Silicon carbide turns on its power
Author
Rahman, M. Mahmudur ; Furukawa, Seijiro
Author_Institution
Dept. of Electr. Eng., Santa Clara Univ., CA, USA
Volume
8
Issue
1
fYear
1992
Firstpage
22
Lastpage
26
Abstract
The characteristics of SiC are discussed. The device technology, the various devices that have been fabricated, and the opportunity for fabricating new devices are examined. Techniques for growing large crystals are described.<>
Keywords
crystal growth; semiconductor materials; semiconductor technology; silicon compounds; SiC; crystal growth; device technology; fabrication; large crystals; semiconductors; Atomic layer deposition; Conducting materials; Electric breakdown; Gallium arsenide; Intelligent sensors; Photonic band gap; Semiconductor materials; Silicon carbide; Stacking; Thermal conductivity;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/101.121310
Filename
121310
Link To Document