• DocumentCode
    1243384
  • Title

    Growth of CeO2 thin films by laser ablation

  • Author

    Amirhaghi, Sasson ; Beech, F. ; Vickers, M. ; Barnes, P. ; Tarling, S. ; Boyd, I.W.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2304
  • Lastpage
    2305
  • Abstract
    Thin films of CeO2 have been grown in situ on silicon
  • Keywords
    X-ray crystallography; X-ray diffraction examination of materials; cerium compounds; epitaxial layers; laser beam applications; silicon; substrates; vapour phase epitaxial growth; CeO 2-Si; O 2 partial pressure; Si; X-ray diffraction; buffer layer; grown in situ; heteroepitaxy; laser ablation; preferential; substrate temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911427
  • Filename
    121328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1243384