DocumentCode :
1243384
Title :
Growth of CeO2 thin films by laser ablation
Author :
Amirhaghi, Sasson ; Beech, F. ; Vickers, M. ; Barnes, P. ; Tarling, S. ; Boyd, I.W.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
Volume :
27
Issue :
25
fYear :
1991
Firstpage :
2304
Lastpage :
2305
Abstract :
Thin films of CeO2 have been grown in situ on silicon
Keywords :
X-ray crystallography; X-ray diffraction examination of materials; cerium compounds; epitaxial layers; laser beam applications; silicon; substrates; vapour phase epitaxial growth; CeO 2-Si; O 2 partial pressure; Si; X-ray diffraction; buffer layer; grown in situ; heteroepitaxy; laser ablation; preferential; substrate temperature;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19911427
Filename :
121328
Link To Document :
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