Title :
Low threshold 1.3 μm-GaInAsP/InP tensile strained single quantum well lasers grown by low-pressure MOCVD
Author :
Yokouchi, N. ; Yamanaka, N. ; Iwai, N. ; Kasukawa, A.
Author_Institution :
Yokohama Res. & Dev. Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
1/19/1995 12:00:00 AM
Abstract :
1.3 μm Ga0.49In0.51As0.7P0.3-1.15% tensile strained single quantum well (SQW) lasers are successfully fabricated. The lowest threshold current for a 200 μm-long, 20 μm-wide ridge waveguide laser with high reflectivity coating is as low as 6 mA, corresponding to a very low threshold current density of 150 A/cm2
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser transitions; quantum well lasers; ridge waveguides; vapour phase epitaxial growth; waveguide lasers; 1.3 micron; 6 mA; GRINSCH; Ga0.49In0.51As0.7P0.3 -InP; current density; fabrication; high reflectivity coating; low-pressure MOCVD; ridge waveguide laser; semiconductor lasers; single quantum well lasers; tensile strained SQW lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950054
