DocumentCode
1243409
Title
Carrier screening of electric field and electroabsorption saturation in InGaAs-GaAs quantum well structure
Author
Chin, M.K. ; Niki, S. ; Wieder, H.H. ; Chang, W.S.C.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA
Volume
27
Issue
25
fYear
1991
Firstpage
2310
Lastpage
2312
Abstract
Saturation of the electroabsorption is obtained in the quantum confined Stark effect (QCSE) at low optical intensities and low electric fields, in a strained InGaAs-GaAs quantum well modulator structure operating at the exciton energy. This effect is attributed to carrier-induced screening of the internal electric field, and its implications for devices using the QCSE are discussed.
Keywords
III-V semiconductors; Stark effect; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; InGaAs-GaAs; QCSE; carrier-induced screening; electric field screening effect; electroabsorption saturation; low electric fields; low optical intensities; quantum confined Stark effect; semiconductors; strained InGaAs-GaAs quantum well modulator structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911431
Filename
121332
Link To Document