• DocumentCode
    1243428
  • Title

    Effect of photodecomposed-PH3 treatment on PN/InP metal-insulator-semiconductor diodes

  • Author

    Uda, A. ; Sugino, Takushi ; Ito, H. ; Shirafuji, J.

  • Author_Institution
    Dept. of Electr. Eng., Osaka Univ., Japan
  • Volume
    27
  • Issue
    25
  • fYear
    1991
  • Firstpage
    2315
  • Lastpage
    2317
  • Abstract
    The effect of photodecomposed phosphine (PD-PH3) treatment on the interfacial properties of phosphorus nitride/indium phosphide (PN/InP) metal-insulator-semiconductor (MIS) structures has been investigated. It is demonstrated that PD-PH3 treatment is effective in reducing the interface state density for PN/InP MIS diodes fabricated by photochemical vapour deposition (photo-CVD). An interface state density as low as 3.1*1011 eV -1 cm-2 is achieved by an in situ photoprocess consisting of PD-PH3 treatment and subsequent PN deposition.
  • Keywords
    CVD coatings; III-V semiconductors; chemical vapour deposition; dielectric thin films; indium compounds; insulating thin films; interface electron states; metal-insulator-semiconductor devices; phosphorus compounds; semiconductor diodes; semiconductor-insulator boundaries; surface treatment; PN-InP; in situ photoprocess; interface density; interface state density reduction; interfacial properties; metal-insulator-semiconductor diodes; photo-CVD; photochemical vapour deposition; photodecomposed PH 3 pretreatment; subsequent PN deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911434
  • Filename
    121335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1243428