DocumentCode
1243439
Title
Ion beam milling-induced damage in AlGaAs/GaAs/AlGaAs single quantum well
Author
Swaminathan, Viswanathan ; Przybylek, G.J. ; Guth, G. ; Asom, M.T.
Author_Institution
AT&T Bell Labs., Solid State Technol. Center, Breinigsville, PA, USA
Volume
27
Issue
25
fYear
1991
Firstpage
2320
Lastpage
2322
Abstract
Ion beam milling-induced damage in a 500 AA AlGaAs/40 AA GaAs/500 AA AlGaAs single quantum well structure was investigated using low temperature cathodoluminescence spectroscopy. The ion beam energy (500-1500 eV) dependence of luminescence intensity indicated that minimum damage is introduced at a beam energy of 500 eV. Most (80-85%) of the original luminescence intensity was recovered on annealing at 400 degrees C for 5 min.
Keywords
III-V semiconductors; aluminium compounds; cathodoluminescence; gallium arsenide; semiconductor quantum wells; sputter etching; 40 A; 400 C; 5 min; 500 A; 500 to 1500 eV; AlGaAs-GaAs-AlGaAs; annealing; ion beam energy; ion beam milling induced damage; low temperature cathodoluminescence spectroscopy; luminescence intensity recovery; single quantum well structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911437
Filename
121337
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