Title :
Ion beam milling-induced damage in AlGaAs/GaAs/AlGaAs single quantum well
Author :
Swaminathan, Viswanathan ; Przybylek, G.J. ; Guth, G. ; Asom, M.T.
Author_Institution :
AT&T Bell Labs., Solid State Technol. Center, Breinigsville, PA, USA
Abstract :
Ion beam milling-induced damage in a 500 AA AlGaAs/40 AA GaAs/500 AA AlGaAs single quantum well structure was investigated using low temperature cathodoluminescence spectroscopy. The ion beam energy (500-1500 eV) dependence of luminescence intensity indicated that minimum damage is introduced at a beam energy of 500 eV. Most (80-85%) of the original luminescence intensity was recovered on annealing at 400 degrees C for 5 min.
Keywords :
III-V semiconductors; aluminium compounds; cathodoluminescence; gallium arsenide; semiconductor quantum wells; sputter etching; 40 A; 400 C; 5 min; 500 A; 500 to 1500 eV; AlGaAs-GaAs-AlGaAs; annealing; ion beam energy; ion beam milling induced damage; low temperature cathodoluminescence spectroscopy; luminescence intensity recovery; single quantum well structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911437
