DocumentCode
1243514
Title
A multimode self-consistent model of the lasing characteristics of buried heterostructure lasers
Author
Gurney, P.C.R. ; Ormondroyd, R.F.
Author_Institution
Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia
Volume
31
Issue
3
fYear
1995
fDate
3/1/1995 12:00:00 AM
Firstpage
427
Lastpage
438
Abstract
Constricted mesa and buried heterostructure lasers have extremely wide modulation bandwidths due to their low parasitic capacitance and resistance and-because the structure provides very high confinement of both the carriers and photons in the active layer. The modulation bandwidth of these lasers is limited by current leakage effects and multilateral mode operation which both conspire to reduce the effective optical gain of the laser for a given operating current. These two problems are addressed and a fully self-consistent model of the lateral modal behavior and the current leakage problem in buried heterostructure lasers is addressed. The optical problem is solved using a modified version of the weighted index method, which provides a two-dimensional solution for optically active material with complex permittivity, and the onset of multimode behavior, where there is a superposition of two or more lateral modes, is also examined
Keywords
capacitance; laser modes; laser theory; leakage currents; optical modulation; permittivity; refractive index; semiconductor device models; semiconductor lasers; active layer; buried heterostructure lasers; carrier confinement; complex permittivity; constricted mesa lasers; current leakage effects; current leakage problem; effective optical gain; extremely wide modulation bandwidths; high confinement; lasing characteristics; lateral modal behavior; low parasitic capacitance; modulation bandwidth; multilateral mode operation; multimode behavior; multimode self-consistent model; operating current; photon confinement; weighted index method; Bandwidth; Carrier confinement; Diodes; Indium phosphide; Laser modes; Optical design; Optical materials; Optical modulation; Parasitic capacitance; Semiconductor lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.364397
Filename
364397
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