• DocumentCode
    1243514
  • Title

    A multimode self-consistent model of the lasing characteristics of buried heterostructure lasers

  • Author

    Gurney, P.C.R. ; Ormondroyd, R.F.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia
  • Volume
    31
  • Issue
    3
  • fYear
    1995
  • fDate
    3/1/1995 12:00:00 AM
  • Firstpage
    427
  • Lastpage
    438
  • Abstract
    Constricted mesa and buried heterostructure lasers have extremely wide modulation bandwidths due to their low parasitic capacitance and resistance and-because the structure provides very high confinement of both the carriers and photons in the active layer. The modulation bandwidth of these lasers is limited by current leakage effects and multilateral mode operation which both conspire to reduce the effective optical gain of the laser for a given operating current. These two problems are addressed and a fully self-consistent model of the lateral modal behavior and the current leakage problem in buried heterostructure lasers is addressed. The optical problem is solved using a modified version of the weighted index method, which provides a two-dimensional solution for optically active material with complex permittivity, and the onset of multimode behavior, where there is a superposition of two or more lateral modes, is also examined
  • Keywords
    capacitance; laser modes; laser theory; leakage currents; optical modulation; permittivity; refractive index; semiconductor device models; semiconductor lasers; active layer; buried heterostructure lasers; carrier confinement; complex permittivity; constricted mesa lasers; current leakage effects; current leakage problem; effective optical gain; extremely wide modulation bandwidths; high confinement; lasing characteristics; lateral modal behavior; low parasitic capacitance; modulation bandwidth; multilateral mode operation; multimode behavior; multimode self-consistent model; operating current; photon confinement; weighted index method; Bandwidth; Carrier confinement; Diodes; Indium phosphide; Laser modes; Optical design; Optical materials; Optical modulation; Parasitic capacitance; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.364397
  • Filename
    364397