Title :
High output power tunable twin-guide laser diodes with improved lateral current injection structure
Author :
Todt, R. ; Jacke, T. ; Meyer, Roland ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
Tunable twin-guide laser diodes with improved lateral current injection structure and high output power are reported. By optimising the doping profile of the n-InP layer laterally surrounding the buried stripe, inherent leakage currents are effectively minimised. Thereby, the carrier injection efficiency of the laser diode is significantly increased and high output powers of up to 24 and 3.3 mW are obtained at operation temperatures of 20 and 80/spl deg/C, respectively.
Keywords :
III-V semiconductors; MOCVD; buried layers; chemical beam epitaxial growth; doping profiles; gallium arsenide; gallium compounds; indium compounds; laser tuning; leakage currents; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 20 degC; 24 mW; 3.3 mW; 80 degC; GaInAsP-InP; MOCVD; buried stripe; carrier injection efficiency; chemical beam epitaxial growth; doping profile; lateral current injection structure; leakage currents; n-InP layer; semiconductor epitaxial layers; semiconductor growth; tunable twin guide laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057724
