High output power tunable twin-guide laser diodes with improved lateral current injection structure

Author

Todt, R. ; Jacke, T. ; Meyer, Roland ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

Volume

41

Issue

4

fYear

2005

Firstpage

190

Lastpage

191

Abstract

Tunable twin-guide laser diodes with improved lateral current injection structure and high output power are reported. By optimising the doping profile of the n-InP layer laterally surrounding the buried stripe, inherent leakage currents are effectively minimised. Thereby, the carrier injection efficiency of the laser diode is significantly increased and high output powers of up to 24 and 3.3 mW are obtained at operation temperatures of 20 and 80/spl deg/C, respectively.

Keywords

III-V semiconductors; MOCVD; buried layers; chemical beam epitaxial growth; doping profiles; gallium arsenide; gallium compounds; indium compounds; laser tuning; leakage currents; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; 20 degC; 24 mW; 3.3 mW; 80 degC; GaInAsP-InP; MOCVD; buried stripe; carrier injection efficiency; chemical beam epitaxial growth; doping profile; lateral current injection structure; leakage currents; n-InP layer; semiconductor epitaxial layers; semiconductor growth; tunable twin guide laser diodes;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20057724

Filename

1397402