DocumentCode
1244137
Title
Very low driving-voltage InGaAlAs/InAlAs electroabsorption modulators operating at 40 Gbit/s
Author
Fukano, H. ; Yamanaka, T. ; Tamura, Masato ; Kondo, Yuta ; Saitoh, Takashi
Author_Institution
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Volume
41
Issue
4
fYear
2005
Firstpage
211
Lastpage
212
Abstract
A 40 Gbit/s electroabsorption modulator driven by a peak-to-peak voltage as low as 0.79 V has been successfully fabricated. This device showed a 3 dB E/O bandwidth of 46 GHz and a return loss of below -10 dB even at 50 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well (MQW) layers with excellent extinction characteristics and by maximising the 3 dB bandwidth, which was achieved by reducing MQW core width and using a polyimide-buried device structure with a low-loss microwave feed line.
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; millimetre wave devices; optical fibre filters; polymers; quantum well devices; 0.79 V; 40 Gbit/s; 46 GHz; 50 GHz; InGaAlAs-InAlAs; InGaAlAs-InAlAs electroabsorption modulators; MQW core width reduction; microwave feed line; multiple quantum well layers; polyimide buried device structure; return loss; strain compensated MQW layers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20057992
Filename
1397416
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