DocumentCode :
1244157
Title :
Temperature stability of ZnO thin film SAW device on fused quartz
Author :
Tomar, Monika ; Gupta, Vinay ; Sreenivas, K. ; Mansingh, Abhai
Author_Institution :
Dept. of Phys. & Astrophys., Univ. of Delhi, India
Volume :
5
Issue :
3
fYear :
2005
Firstpage :
494
Lastpage :
500
Abstract :
Surface acoustic wave (SAW) filters for low-frequency (38-65 MHz) applications have been developed using a radio frequency (RF)-magnetron-sputtered ZnO film on fused-quartz substrates. SAW propagation characteristics such as electromechanical coupling coefficient (K2), SAW phase velocity (v), insertion loss, and temperature coefficient of delay (TCD) have been measured. The intergidital transducer (IDT)/ZnO/fused-quartz device structure yields almost zero TCD (1 ppm·°C-1) with 0.316 λ thick ZnO layer (for the device operating at 60 MHz). Alternately, an overlayer of positive TCD material (ZnO itself) has also been deposited on the IDT/ZnO(<0.316 λ)/fused-quartz device at a low substrate temperature to reduce the TCD. A modified layered structure consisting of ZnO/IDT/ZnO/fused quartz yields almost zero TCD (-3 ppm·°C-1) with a 5.3-μm-thick ZnO overlayer and a 8.1-μm-thick (0.183 λ) ZnO bottom layer. Experimentally obtained SAW propagation characteristics have been compared with the theoretical results.
Keywords :
II-VI semiconductors; piezoelectric semiconductors; piezoelectric thin films; piezoelectric transducers; quartz; substrates; surface acoustic wave filters; thermal stability; vapour deposition; zinc compounds; 38 to 65 MHz; 5.3 micron; 60 MHz; 8.1 micron; ZnO; fused quartz substrates; intergidital transducer; radio frequency magnetron sputtering; surface acoustic wave filters; temperature stability; thin films; Acoustic waves; Filters; Radio frequency; Stability; Substrates; Surface acoustic wave devices; Surface acoustic waves; Temperature; Thin film devices; Zinc oxide; Deposition by sputtering (81.15.Cd); filters (84.30.Vn); surface acoustic waves (SAWs) in piezoelectrics (77.65.Dq); thermal stability (68.60.Dv);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2005.853453
Filename :
1545912
Link To Document :
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