AlGaN-GaN HEMTs on patterned silicon (111) substrate

Author

Shuo Jia ; Dikme, Y. ; Deliang Wang ; Chen, K.J. ; Lau, K.M. ; Heuken, M.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

26

Issue

3

fYear

2005

fDate

3/1/2005 12:00:00 AM

Firstpage

130

Lastpage

132

Abstract

We report the AlGaN-GaN high-electron mobility transistors (HEMTs) grown and fabricated on patterned silicon (111) substrates. A crack-free AlGaN-GaN HEMT heterostructure was grown on top of rectangular silicon ridges patterned on the silicon substrate. Fabrication of HEMT on the ridges was demonstrated using a polyimide planarization process. Maximum drain current density of 1.05 A/mm and peak transconductance of 150 mS/mm were achieved with 1.0 μm gate-length. The current gain cutoff frequency and maximum frequency of oscillation were 9.7 and 20.5 GHz, respectively, for the 1 μm × 300 μm devices.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; microwave field effect transistors; planarisation; semiconductor growth; silicon; wide band gap semiconductors; 1.0 micron; 20.5 GHz; 9.7 GHz; AlGaN-GaN; HEMT fabrication; HEMT heterostructure; Si; current gain cutoff frequency; high electron mobility transistors; maximum drain current density; maximum oscillation frequency; patterned silicon (111) substrate; peak transconductance; polyimide planarization process; rectangular silicon ridges; Aluminum gallium nitride; Current density; Cutoff frequency; Fabrication; HEMTs; MODFETs; Planarization; Polyimides; Silicon; Transconductance; (111) silicon; AlGaN–GaN; high-electron mobility transistor (HEMT); patterned substrate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.842647

Filename

1397836