Title :
Compact logic NAND-gate based on a single in-plane quantum-wire transistor
Author :
Reitzenstein, S. ; Worschech, L. ; Müller, C.R. ; Forchel, A.
Author_Institution :
Univ. Wurzburg, Germany
fDate :
3/1/2005 12:00:00 AM
Abstract :
We propose and demonstrate the operation of a monolithic logic NAND-gate based on a single in-plane quantum-wire transistor (QWT). The QWT is controlled by two lateral gates which serve as input terminals with a nonlinear transfer characteristic. Logic operation is demonstrated by exploiting a gate voltage-dependent efficiency of the lateral gates. The compact logic NAND-gate features high input impedance, shows voltage gain, and operates at room temperature.
Keywords :
NAND circuits; logic gates; semiconductor quantum wires; transistors; gating efficiency; in plane quantum wire transistor; logic NAND gate; logic operation; nonlinear transfer characteristic; Epitaxial layers; Helium; Impedance; Logic devices; Logic gates; Nanoscale devices; Oxidation; Quantum dots; Temperature; Voltage; Gating efficiency; logic gate; quantum-wire; transistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.842651
