DocumentCode
1244628
Title
Compact logic NAND-gate based on a single in-plane quantum-wire transistor
Author
Reitzenstein, S. ; Worschech, L. ; Müller, C.R. ; Forchel, A.
Author_Institution
Univ. Wurzburg, Germany
Volume
26
Issue
3
fYear
2005
fDate
3/1/2005 12:00:00 AM
Firstpage
142
Lastpage
144
Abstract
We propose and demonstrate the operation of a monolithic logic NAND-gate based on a single in-plane quantum-wire transistor (QWT). The QWT is controlled by two lateral gates which serve as input terminals with a nonlinear transfer characteristic. Logic operation is demonstrated by exploiting a gate voltage-dependent efficiency of the lateral gates. The compact logic NAND-gate features high input impedance, shows voltage gain, and operates at room temperature.
Keywords
NAND circuits; logic gates; semiconductor quantum wires; transistors; gating efficiency; in plane quantum wire transistor; logic NAND gate; logic operation; nonlinear transfer characteristic; Epitaxial layers; Helium; Impedance; Logic devices; Logic gates; Nanoscale devices; Oxidation; Quantum dots; Temperature; Voltage; Gating efficiency; logic gate; quantum-wire; transistor;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2004.842651
Filename
1397840
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